The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2023
Filed:
Jun. 02, 2021
Tahoe Research, Ltd., Dublin, IE;
Gilbert Dewey, Hillsboro, OR (US);
Matthew V. Metz, Portland, OR (US);
Willy Rachmady, Beaverton, OR (US);
Anand S. Murthy, Portland, OR (US);
Chandra S. Mohapatra, Beaverton, OR (US);
Tahir Ghani, Portland, OR (US);
Sean T. Ma, Portland, OR (US);
Jack T. Kavalieros, Portland, OR (US);
Tahoe Research, Ltd., Dublin, IE;
Abstract
An apparatus is described. The apparatus includes a FINFET device having a channel. The channel is composed of a first semiconductor material that is epitaxially grown on a subfin structure beneath the channel. The subfin structure is composed of a second semiconductor material that is different than the first semiconductor material. The subfin structure is epitaxially grown on a substrate composed of a third semiconductor material that is different than the first and second semiconductor materials. The subfin structure has a doped region to substantially impede leakage currents between the channel and the substrate.