The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2023

Filed:

Dec. 17, 2020
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Daniel Fulford, Albany, NY (US);

Michael Murphy, Albany, NY (US);

Jodi Grzeskowiak, Albany, NY (US);

Jeffrey Smith, Albany, NY (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/11 (2006.01); H01L 21/311 (2006.01); G03F 7/09 (2006.01); G03F 7/32 (2006.01); G03F 7/38 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0045 (2013.01); G03F 7/094 (2013.01); G03F 7/11 (2013.01); G03F 7/32 (2013.01); G03F 7/38 (2013.01); H01L 21/31133 (2013.01);
Abstract

In certain embodiments, a method for processing a semiconductor substrate includes depositing a resin film on a substrate that has microfabricated structures defining recesses. The resin film fills the recesses and covers the microfabricated structures. The method includes performing, using a photoacid generator (PAG)-based process, a localized removal of the resin film to remove the resin film to respective first depths in the recesses, at least two depths of the respective first depths being different depths. The method includes repeatedly performing, using a thermal acid generator (TAG)-based process and until a predetermined condition is met, a uniform removal of a remaining portion of the resin film to remove a substantially uniform depth of the resin film in the recesses.


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