The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2023
Filed:
Jun. 29, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Han-Yu Lin, Hsinchu, TW;
Yi-Ruei Jhan, Hsinchu, TW;
Fang-Wei Lee, Hsinchu, TW;
Tze-Chung Lin, Hsinchu, TW;
Chao-Hsien Huang, Hsinchu, TW;
Li-Te Lin, Hsinchu, TW;
Pinyen Lin, Rochester, NY (US);
Akira Mineji, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor substrate, a semiconductor fin protruding from the semiconductor substrate, and an isolation layer disposed above the semiconductor substrate. The isolation layer includes a first portion disposed on a first sidewall of the semiconductor fin and a second portion disposed on a second sidewall of the semiconductor fin. Top surfaces of the first and second portions of the isolation layer are leveled. The first portion of the isolation layer includes an air pocket. The semiconductor device also includes a dielectric fin with a bottom portion embedded in the second portion of the isolation layer.