The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2023
Filed:
Apr. 02, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chi-Sheng Lai, Hsinchu, TW;
Yu-Fan Peng, Hsinchu, TW;
Li-Ting Chen, Hsinchu, TW;
Yu-Shan Lu, Hsinchu County, TW;
Yu-Bey Wu, Hsinchu, TW;
Wei-Chung Sun, Hsinchu, TW;
Yuan-Ching Peng, Hsinchu, TW;
Kuei-Yu Kao, Hsinchu, TW;
Shih-Yao Lin, New Taipei, TW;
Chih-Han Lin, Hsinchu, TW;
Pei-Yi Liu, Hsinchu, TW;
Jing Yi Yan, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a semiconductor substrate; fin active regions protruded above the semiconductor substrate; and a gate stack disposed on the fin active regions; wherein the gate stack includes a high-k dielectric material layer, and various metal layers disposed on the high-k dielectric material layer. The gate stack has an uneven profile in a sectional view with a first dimension Dat a top surface, a second dimension Dat a bottom surface, and a third dimension Dat a location between the top surface and the bottom surface, and wherein each of Dand Dis greater than D.