The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2023
Filed:
Jun. 21, 2021
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Jun He, Hsinchu, TW;
Yu-Ting Lin, Hsin-Chu, TW;
Wei-Hsun Lin, Hsinchu County, TW;
Yung-Liang Kuo, Hsinchu, TW;
Yinlung Lu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
The present disclosure provides a method and a system for testing semiconductor device. The method includes the following operations. A wafer having an IC formed thereon is provided. The IC is energized by raising the voltage of the IC to a first voltage level during a first period. A stress signal is applied to the IC. The stress signal includes a plurality of sequences during a second period subsequent to the first period. Each of the sequence has a ramp-up stage and a ramp-down stage. The stress signal causes the voltage of the IC to fluctuate between a second voltage level and a third voltage level. Whether the IC complies with a test criterion is determined after applying the stress signal.