The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2023
Filed:
Apr. 18, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Zhi-Chang Lin, Hsinchu County, TW;
Shih-Cheng Chen, New Taipei, TW;
Jung-Hung Chang, Changhua County, TW;
Lo-Heng Chang, Hsinchu, TW;
Chien-Ning Yao, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A device includes a substrate, a semiconductor layer, a gate structure, source/drain regions, a bottom isolation layer, and a bottom spacer. The semiconductor layer is above the substrate. The gate structure is above the substrate and surrounds the semiconductor layer. The source/drain regions are on opposite sides of the semiconductor layer. The bottom isolation layer is between the substrate and the semiconductor layer. The bottom spacer is on a sidewall of the bottom isolation layer. The bottom isolation layer has a seam therein, and the seam exposes a sidewall of the bottom spacer.