The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2023

Filed:

Dec. 16, 2021
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Prashant Majhi, San Jose, CA (US);

Ravi Pillarisetty, Portland, OR (US);

Elijah V. Karpov, Portland, OR (US);

Brian S. Doyle, Porland, OR (US);

Abhishek A. Sharma, Hillsboro, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 27/22 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2409 (2013.01); H01L 27/224 (2013.01); H01L 27/2481 (2013.01); H01L 45/1675 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01);
Abstract

Embedded non-volatile memory structures having double selector elements are described. In an example, a memory device includes a word line. A double selector element is above the word line. The double selector element includes a first selector material layer, a second selector material layer different than the first selector material layer, and a conductive layer directly between the first selector material layer and the second selector material layer. A bipolar memory element is above the word line. A conductive electrode is between the double selector element and the bipolar memory element. A bit line is above the word line.


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