The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2023

Filed:

Aug. 24, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Ching-Yi Chen, Hsinchu, TW;

Wei-Yip Loh, Hsinchu, TW;

Hung-Hsu Chen, Tainan, TW;

Chih-Wei Chang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 21/02 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02172 (2013.01); H01L 21/02164 (2013.01); H01L 21/02252 (2013.01); H01L 27/0886 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/7831 (2013.01); H01L 29/7848 (2013.01); H01L 29/7851 (2013.01);
Abstract

A nitrogen plasma treatment is used on an adhesion layer of a contact plug. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the adhesion layer. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the adhesion layer. A nitrogen plasma treatment is used on an opening in an insulating layer. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the insulating layer at the opening. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the insulating layer.


Find Patent Forward Citations

Loading…