The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2023
Filed:
Mar. 31, 2021
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Changhung Kung, Shanghai, CN;
Ting Ye, Shanghai, CN;
Xiumei Hu, Shanghai, CN;
Jianxun Chen, Shanghai, CN;
Chanyuan Hu, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
A method for manufacturing a semiconductor device comprising: providing a substrate, wherein a first gate structure corresponding to a dense area transistor and a second gate structure corresponding to an isolated area transistor are formed on the substrate, and the first gate structure is higher than the second gate structure; forming a buffer layer over the second gate structure, wherein the upper surface of the buffer layer is flush with the upper surface of the first gate structure; and removing the top of the first gate structure, and forming a hard mask filling layer on a top area of the first gate structure.