The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2023

Filed:

Aug. 26, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Jothilingam Ramalingam, Milpitas, CA (US);

Xiaozhou Che, Sunnyvale, CA (US);

Yong Cao, San Jose, CA (US);

Shane Lavan, Palo Alto, CA (US);

Chunming Zhou, Fremont, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/35 (2006.01); H01L 21/02 (2006.01); C23C 14/06 (2006.01); H01J 37/34 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C23C 14/35 (2013.01); C23C 14/0652 (2013.01); H01J 37/32082 (2013.01); H01J 37/32715 (2013.01); H01J 37/345 (2013.01); H01J 37/3405 (2013.01); H01L 21/0217 (2013.01); H01L 21/02266 (2013.01);
Abstract

A method of depositing a backside film layer on a backside of a substrate includes loading a substrate having one or more films deposited on a front side of the substrate onto a substrate support of a processing chamber, depositing, from the sputter target, a target material on the backside of the substrate to form a backside layer on the backside of the substrate, and applying an RF bias to an electrode disposed within the substrate support while depositing the target material. The front side of the substrate faces the substrate support and is spaced from a top surface of the substrate support, and a backside of the substrate faces a sputter target of the processing chamber.


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