The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2023
Filed:
Mar. 26, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Fong-Yuan Chang, Hsinchu County, TW;
Kuo-Nan Yang, Hsinchu, TW;
Chung-Hsing Wang, Hsinchu County, TW;
Lee-Chung Lu, Taipei, TW;
Sheng-Fong Chen, Hsinchu County, TW;
Po-Hsiang Huang, Tainan, TW;
Hiranmay Biswas, Kolkata, IN;
Sheng-Hsiung Chen, Hsinchu County, TW;
Aftab Alam Khan, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes forming a cell layer including first and second cells, each of which is configured to perform a circuit function; forming a first metal layer above the cell layer and including a first conductive feature and a second conductive feature extending along a first direction, in which the first conductive feature extends from the first cell into the second cell, and in which a shortest distance between a center line of the first conductive feature and a center line of the second conductive feature along a second direction is less than a width of the first conductive feature, and the second direction is perpendicular to the first direction; forming a first conductive via interconnecting the cell layer and the conductive feature.