The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2023

Filed:

Oct. 28, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Shih-Kang Fu, Hsinchu, TW;

Ming-Han Lee, Hsinchu, TW;

Shau-Lin Shue, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7684 (2013.01); H01L 21/76846 (2013.01); H01L 23/5283 (2013.01); H01L 23/5329 (2013.01); H01L 23/53204 (2013.01);
Abstract

A semiconductor device is provided. The semiconductor device includes a dielectric layer over a substrate and a contact structure embedded in the dielectric layer. The contact structure includes a diffusion barrier contacting the dielectric layer, the diffusion barrier including a titanium (Ti)-containing alloy. The contact structure further includes a liner on the diffusion barrier, the liner including a noble metal. The contact structure further includes a conductive plug on the liner.


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