The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
May. 20, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Jia-Heng Wang, Kaohsiung, TW;
Pang-Chi Wu, Hsinchu, TW;
Chao-Hsun Wang, Taoyuan, TW;
Fu-Kai Yang, Hsinchu, TW;
Mei-Yun Wang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Semiconductor structures and methods for manufacturing the same are provided. The method for manufacturing the semiconductor structure includes forming a gate structure over a substrate and forming a mask layer covering the gate structure. The method also includes forming a source/drain structure adjacent to the gate structure over the substrate and forming a contact over the source/drain structure. The method also includes forming a dielectric layer over the contact and the mask layer and forming a first trench through the dielectric layer and the mask layer over the gate structure. The method also includes forming a first conductive structure in the first trench and removing an upper portion of the first conductive structure. The method also includes forming a second conductive structure through the dielectric layer and covering the contact and the first conductive structure.