The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2022

Filed:

Jan. 07, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yao-Min Liu, Taipei, TW;

Chia-Pang Kuo, Taoyuan, TW;

Chien Chung Huang, Taichung, TW;

Chih-Yi Chang, New Taipei, TW;

Ya-Lien Lee, Baoshan Township, TW;

Chun-Chieh Lin, Taichung, TW;

Hung-Wen Su, Jhubei, TW;

Ming-Hsing Tsai, Chu-Pei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/76843 (2013.01); H01L 21/76879 (2013.01);
Abstract

A semiconductor structure and a method of forming the same are provided. A method includes depositing a dielectric layer over a conductive feature. The dielectric layer is patterned to form an opening therein. The opening exposes a first portion of the conductive feature. A first barrier layer is deposited on a sidewall of the opening. The first portion of the conductive feature remains exposed at the end of depositing the first barrier layer.


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