The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
Jan. 14, 2020
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tsmc Nanjing Company, Limited, Nanjing, CN;
Sheng-Lin Hsieh, Hsinchu, TW;
I-Chih Chen, Tainan, TW;
Ching-Pei Hsieh, Kaohsiung, TW;
Kuan Jung Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
TSMC NANJING COMPANY, LIMITED, Nanjing, CN;
Abstract
A method of forming a semiconductor device structure is provided. The method includes forming a resist structure over a substrate. The resist structure includes an anti-reflective coating (ARC) layer and a photoresist layer over the ARC layer. The method further includes patterning the photoresist layer to form a trench therein. The method further includes performing a hydrogen plasma treatment to the patterned photoresist layer. The hydrogen plasma treatment is configured to smooth sidewalls of the trench without etching the ARC layer. The method further includes patterning the ARC layer using the patterned photoresist layer as a etch mask.