The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2022

Filed:

Sep. 29, 2017
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Dax M. Crum, Beaverton, OR (US);

Cory E. Weber, Hillsboro, OR (US);

Rishabh Mehandru, Portland, OR (US);

Harold Kennel, Portland, OR (US);

Benjamin Chu-Kung, Portland, OR (US);

Assignee:

INTEL CORPORATION, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/04 (2006.01); H01L 29/417 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 29/267 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 21/02532 (2013.01); H01L 21/02546 (2013.01); H01L 21/02609 (2013.01); H01L 21/28512 (2013.01); H01L 21/28575 (2013.01); H01L 29/045 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/20 (2013.01); H01L 29/267 (2013.01); H01L 29/41791 (2013.01); H01L 29/66522 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

An apparatus is provided which comprises: a first region over a substrate, wherein the first region comprises a first semiconductor material having a L-valley transport energy band structure, a second region in contact with the first region at a junction, wherein the second region comprises a second semiconductor material having a X-valley transport energy band structure, wherein a <111> crystal direction of one or more crystals of the first and second semiconductor materials are substantially orthogonal to the junction, and a metal adjacent to the second region, the metal conductively coupled to the first region through the junction. Other embodiments are also disclosed and claimed.


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