The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2022
Filed:
Mar. 22, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tsmc Nanjing Company Limited, Nanjing, CN;
Tsmc China Company Limited, Shanghai, CN;
He-Zhou Wan, Shanghai, CN;
Xiu-Li Yang, Shanghai, CN;
Mu-Yang Ye, Nanjing, CN;
Yan-Bo Song, Shanghai, CN;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
TSMC NANJING COMPANY LIMITED, Nanjing, CN;
TSMC CHINA COMPANY LIMITED, Shanghai, CN;
Abstract
A memory device includes a word line driver. The word line driver is coupled through word lines to an array of bit cells. The word line driver includes a first driving circuit, a second driving circuit and a modulating circuit. The first driving circuit and the second driving circuit are configured to select a word line. The modulating circuit is coupled through the selected word line to the first driving circuit and the second driving circuit, and is configured to modulate at least one signal transmitted through the selected word line. The first driving circuit and the second driving circuit are further configured to charge the selected word line to generate a first voltage signal and a second voltage signal at two positions of the selected word line. The first voltage signal is substantially the same as the second voltage signal. A method is also disclosed herein.