The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2022

Filed:

Sep. 06, 2020
Applicant:

Kla Corporation, Milpitas, CA (US);

Inventors:

Barry Blasenheim, Campbell, CA (US);

Joseph A. Di Regolo, Livermore, CA (US);

Yan Zhang, Fremont, CA (US);

Robert Press, San Jose, CA (US);

Huy Nguyen, Los Altos, CA (US);

Assignee:

KLA Corporation, Milpitas, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01N 23/201 (2018.01); G03F 7/26 (2006.01); G03F 7/20 (2006.01); G01N 21/956 (2006.01);
U.S. Cl.
CPC ...
G01N 23/201 (2013.01); G03F 7/70625 (2013.01); G03F 7/70633 (2013.01); G01B 2210/56 (2013.01); G01N 21/956 (2013.01); G01N 2223/6116 (2013.01);
Abstract

Methods and systems for measuring the orientation of a wafer at or near an X-ray scatterometry measurement location are described herein. In one aspect, an X-ray scatterometry based metrology system includes a wafer orientation measurement system that measures wafer orientation based on a single measurement without intervening stage moves. In some embodiments, an orientation measurement spot is coincident with an X-ray measurement spot. In some embodiments, an X-ray scatterometry measurement and a wafer orientation measurement are performed simultaneously. In another aspect, signals detected by a wafer orientation measurement system are filtered temporally, spatially, or both, to improve tracking. In another aspect, a wafer orientation measurement system is calibrated to identify the orientation of the wafer with respect to an incident X-ray beam. In another aspect, a wafer under measurement is positioned based on the measured orientation in a closed loop or open loop manner.


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