The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2022
Filed:
May. 12, 2020
Rohm and Haas Electronic Materials Llc, Marlborough, MA (US);
Xisen Hou, Lebanon, NH (US);
Irvinder Kaur, Northborough, MA (US);
Cong Liu, Shrewsbury, MA (US);
Mingqi Li, Shrewsbury, MA (US);
Kevin Rowell, Salem, MA (US);
Cheng-Bai Xu, Southborough, MA (US);
ROHM AND HAAS ELECTRONIC MATERIALS LLC, Marlborough, MA (US);
Abstract
Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the polymer comprises polymerized units of general formulas (I) and (II): wherein: X independently represents a halogen atom; Q represents a single bond, —O—, or —C(O)O—; Rindependently represents hydrogen, a halogen atom, C1-C12 alkyl or C1-C12 fluoroalkyl; Rrepresents C1-C3 alkyl or C1-C3 fluoroalkyl; and m is an integer from 0 to 4; and wherein the polymerized units of general formula (I) are present in the polymer in an amount of 10 to 90 mol % and the polymerized units of general formula (II) are present in the polymer in an amount from 10 to 60 mol %, based on total polymerized units of the polymer. The photoresist pattern trimming compositions and their use in pattern formation methods find particular applicability in the manufacture of semiconductor devices.