The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2022

Filed:

Feb. 06, 2019
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Suddhasattwa Nad, Chandler, AZ (US);

Roy Dittler, Chandler, AZ (US);

Darko Grujicic, Chandler, AZ (US);

Marcel Wall, Phoenix, AZ (US);

Rahul Manepalli, Chandler, AZ (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02499 (2013.01); H01L 21/02636 (2013.01); H01L 21/28562 (2013.01); H01L 21/76874 (2013.01);
Abstract

Embodiments include package substrates and a method of forming the package substrates. A package substrate includes a self-assembled monolayer (SAM) layer over a first dielectric, where the SAM layer includes first end groups and second end groups. The second end groups may include a plurality of hydrophobic moieties. The package substrate also includes a conductive pad on the first dielectric, where the conductive pad has a bottom surface, a top surface, and a sidewall, and where the SAM layer surrounds and contacts a surface of the sidewall of the conductive pad. The hydrophobic moieties may include fluorinated moieties. The conductive pad includes a copper material, where the top surface of the conductive pad has a surface roughness that is approximately equal to a surface roughness of the as-plated copper material. The SAM layer may have a thickness that is approximately 0.1 nm to 20 nm.


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