The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2022

Filed:

Apr. 14, 2021
Applicant:

Entegris, Inc., Billerica, MA (US);

Inventors:

Atanu K. Das, Danbury, CT (US);

Daniela White, Ridgefield, CT (US);

Emanuel I. Cooper, Scarsdale, NY (US);

Eric Hong, Seongnam, KR;

JeongYeol Yang, Gunpo, KR;

Juhee Yeo, Suwon, KR;

Michael L. White, Ridgefield, CT (US);

SeongJin Hong, Cheongju, KR;

SeungHyun Chae, Gunpo, KR;

Steven A. Lippy, Brookfield, CT (US);

WonLae Kim, Gunpo, KR;

Assignee:

ENTEGRIS, INC., Billerica, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/38 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
C23F 1/38 (2013.01); H01L 21/32134 (2013.01);
Abstract

An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 Å/min.


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