The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2022
Filed:
Dec. 06, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chen-Yu Tsai, Zhongli, TW;
Tsung-Shang Wei, Baoshan Township, TW;
Yu-Sheng Lin, Taichung, TW;
Wen-Chih Chiou, Zhunan Township, TW;
Shin-Puu Jeng, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 23/60 (2006.01); H01L 21/48 (2006.01); H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01L 21/683 (2006.01); H01L 23/16 (2006.01); H01L 23/31 (2006.01); H01L 23/29 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 21/561 (2013.01); H01L 21/486 (2013.01); H01L 21/4817 (2013.01); H01L 21/4853 (2013.01); H01L 21/56 (2013.01); H01L 21/565 (2013.01); H01L 21/6835 (2013.01); H01L 23/16 (2013.01); H01L 23/29 (2013.01); H01L 23/3128 (2013.01); H01L 23/3185 (2013.01); H01L 23/3192 (2013.01); H01L 23/49816 (2013.01); H01L 23/49833 (2013.01); H01L 23/5384 (2013.01); H01L 23/5385 (2013.01); H01L 23/60 (2013.01); H01L 24/94 (2013.01); H01L 24/97 (2013.01); H01L 25/0652 (2013.01); H01L 25/0655 (2013.01); H01L 25/50 (2013.01); H01L 23/49811 (2013.01); H01L 23/49827 (2013.01); H01L 23/49894 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 24/92 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68331 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/11002 (2013.01); H01L 2224/1132 (2013.01); H01L 2224/1144 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/14181 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/92125 (2013.01); H01L 2224/94 (2013.01); H01L 2224/97 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/157 (2013.01); H01L 2924/1579 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/15787 (2013.01); H01L 2924/15788 (2013.01); H01L 2924/18161 (2013.01); H01L 2924/3512 (2013.01); H01L 2924/37001 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes bonding a first semiconductor die and a second semiconductor die to a first substrate, forming a conductive layer over the first semiconductor die, the second semiconductor die, and the first substrate, applying an encapsulant over the conductive layer, and removing a portion of the encapsulant, wherein the removing the portion of the encapsulant exposes the conductive layer.