The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2022

Filed:

Aug. 12, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Yung-Yao Lee, Hsinchu County, TW;

Yeh-Chin Wang, Taipei, TW;

Yang-Ann Chu, Hsinchu, TW;

Yung-Hsiang Chen, Hsinchu County, TW;

Yung-Cheng Chen, Hsinchu County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G01N 21/95 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70641 (2013.01); G01N 21/9501 (2013.01);
Abstract

A method includes: providing a workpiece to a semiconductor apparatus, the workpiece comprising a material layer, wherein the material layer includes a plurality of areas extending along a first axis; scanning the workpiece in a first direction along the first axis to generate first topography measurement data; scanning the workpiece in a second direction along the first axis to generate second topography measurement data; and performing an exposure operation on the material layer according to the first topography measurement data and the second topography measurement data.


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