The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2022

Filed:

Jul. 07, 2020
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Peng Chen, Wuhan, CN;

Houde Zhou, Wuhan, CN;

BaoHua Zhang, Wuhan, CN;

Chao Gu, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/367 (2006.01); H01L 23/373 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3121 (2013.01); H01L 21/56 (2013.01); H01L 23/367 (2013.01); H01L 23/3672 (2013.01); H01L 23/3677 (2013.01); H01L 23/373 (2013.01); H01L 23/3735 (2013.01); H01L 23/3736 (2013.01);
Abstract

A manufacturing method of an integrated circuit (IC) packaging structure includes the following steps. One or a plurality of dies is disposed on a packaging substrate. An encapsulation material is formed on the packaging substrate. The encapsulation material is configured to encapsulate the one or the plurality of the dies on the packaging substrate. At least one trench is formed in the encapsulation material. A heat dissipation structure is formed on the encapsulation material, and at least a part of the heat dissipation structure is formed in the at least one trench. The step of forming the heat dissipation structure includes the following steps. A first slurry is formed in the at least one trench, and a first curing process is performed to the first slurry for forming a first portion of the heat dissipation structure.


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