The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2022
Filed:
Aug. 26, 2017
Alex Philip Graham Robinson, Birmingham, GB;
Alexandra Mcclelland, Worcestershire, GB;
Andreas Frommhold, Dera, DE;
Dongxu Yang, Sichuan, CN;
John Roth, Cohasset, MA (US);
David Ure, Wellesley, MA (US);
Alex Philip Graham Robinson, Birmingham, GB;
Alexandra McClelland, Worcestershire, GB;
Andreas Frommhold, Dera, DE;
Dongxu Yang, Sichuan, CN;
John Roth, Cohasset, MA (US);
David Ure, Wellesley, MA (US);
IRRESISTIBLE MATERIALS LTD, Birmingham, GB;
Abstract
The present disclosure relates to novel multiple trigger monomer containing negative working photoresist compositions and processes. The processes involve removing acid-labile protecting groups from crosslinking functionalities in a first step and crosslinking the crosslinking functionality with an acid sensitive crosslinker in a second step. The incorporation of a multiple trigger pathway in the resist catalytic chain increases the chemical gradient in areas receiving a low dose of irradiation, effectively acting as a built in dose depend quencher-analog and thus enhancing chemical gradient and thus resolution, resolution blur and exposure latitude. The photoresist compositions utilize novel monomers and mixtures of novel monomers. The methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays.