The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2022
Filed:
Jul. 16, 2020
Mattson Technology, Inc., Fremont, CA (US);
Beijing E-town Semiconductor Technology Co., Ltd., Beijing, CN;
Shanyu Wang, Fremont, CA (US);
Chun Yan, San Jose, CA (US);
Hua Chung, Saratoga, CA (US);
Michael X. Yang, Palo Alto, CA (US);
Tsai Wen Sung, Fremont, CA (US);
Qi Zhang, San Jose, CA (US);
BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY CO., LTD., Beijing, CN;
MATTSON TECHNOLOGY, INC, Fremont, CA (US);
Abstract
Apparatus, systems, and methods for conducting an etch removal process on a workpiece are provided. The method can include generating a plasma from a deposition process gas in a plasma chamber using a plasma source to deposit a passivation layer on certain layers of a high aspect ratio structure. The method can include generating a plasma from an etch process gas in a plasma chamber using a plasma source to remove certain layers from the high aspect ratio structure. The method can include removing silicon nitride layers at a faster etch rate than silicon dioxide layers on the high aspect ratio structure.