The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2022

Filed:

Jan. 31, 2020
Applicant:

Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);

Inventors:

Morgan Evans, Manchester, MA (US);

Rutger Meyer Timmerman Thijssen, Sunnyvale, CA (US);

Joseph Olson, Beverly, MA (US);

Peter Kurunczi, Cambridge, MA (US);

Robert Masci, Atkinson, NH (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 5/18 (2006.01); G11B 7/1372 (2012.01); G11B 7/1353 (2012.01); H01J 37/30 (2006.01);
U.S. Cl.
CPC ...
G02B 5/1828 (2013.01); G02B 5/1814 (2013.01); G02B 5/1857 (2013.01); G11B 7/1353 (2013.01); G11B 7/1372 (2013.01); H01J 37/30 (2013.01);
Abstract

Embodiments herein provide systems and methods for forming an optical component. A method may include providing a plurality of proximity masks between a plasma source and a workpiece, the workpiece including a plurality of substrates secured thereto. Each of the plurality of substrates may include first and second target areas. The method may further include delivering, from the plasma source, an angled ion beam towards the workpiece, wherein the angled ion beam is then received at one of the plurality of masks. A first proximity mask may include a first set of openings permitting the angled ion beam to pass therethrough to just the first target area of each of the plurality of substrates. A second proximity mask may include a second set of openings permitting the angled ion beam to pass therethrough just to the second target area of each of the plurality of substrates.


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