The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2022
Filed:
Jul. 10, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yan-Ting Shen, Hsinchu, TW;
Chia-Chi Yu, Hsinchu, TW;
Chih-Teng Liao, Hsinchu, TW;
Yu-Li Lin, Kaohsiung, TW;
Chih Hsuan Cheng, Houlong Township, TW;
Tzu-Chan Weng, Kaohsiung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a fin structure protruding from an isolation insulating layer disposed over a substrate and having a channel region, a source/drain region disposed over the substrate, a gate dielectric layer disposed on the channel region, and a gate electrode layer disposed on the gate dielectric layer. The gate electrode includes a lower portion below a level of a top of the channel region and above an upper surface of the isolation insulating layer, and a width of the lower portion is not constant.