The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2022
Filed:
Aug. 14, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yen-Ru Lee, Hsinchu, TW;
Chii-Horng Li, Hsinchu County, TW;
Chien-I Kuo, Chiayi County, TW;
Heng-Wen Ting, Pingtung County, TW;
Jung-Chi Tai, Taipei, TW;
Lilly Su, Hsinchu County, TW;
Yang-Tai Hsiao, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes etching a semiconductor substrate to form a plurality of semiconductor fins. The semiconductor fins are etched to form a recess. An epitaxy structure is grown in the recess. The epitaxy structure has a W-shape cross section. A capping layer is formed over the epitaxy structure. The capping layer is at least conformal to a sidewall of the epitaxy structure. The capping layer is etched to expose a top surface of the epitaxy structure. A first portion of the capping layer remains over the sidewall of the epitaxy structure after etching the capping layer. A contact is formed in contact with the exposed top surface of the epitaxy structure and the first portion of the capping layer.