Hsinchu, Taiwan

Yang-Tai Hsiao


Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2018-2025

where 'Filed Patents' based on already Granted Patents

5 patents (USPTO):

Title: Innovations of Yang-Tai Hsiao in Semiconductor Technology

Introduction

Yang-Tai Hsiao is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on advanced semiconductor devices, particularly in the area of FinFET technology.

Latest Patents

Among his latest patents is a groundbreaking invention titled "Semiconductor Fin-like field-effect transistor (FinFET) device including source/drain structure with boron doped capping layer." This device features a first and second semiconductor fin positioned over a substrate, along with a source/drain epitaxial structure that connects to both fins. The design includes a semiconductive cap and a contact that is electrically connected to the source/drain epitaxial structure. The innovative structure allows for improved performance in semiconductor applications.

Another notable patent is simply titled "Semiconductor device," which shares similar features with the aforementioned invention. This device also includes a first and second semiconductor fin, a source/drain epitaxial structure, a semiconductive cap, and a contact. The design emphasizes the alignment and connection of the components to enhance the functionality of semiconductor devices.

Career Highlights

Yang-Tai Hsiao is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His expertise and innovative approach have positioned him as a key player in the development of advanced semiconductor technologies.

Collaborations

Throughout his career, Yang-Tai Hsiao has collaborated with notable colleagues, including Yen-Ru Lee and Chii-Horng Li. These collaborations have further enriched his work and contributed to the advancements in semiconductor technology.

Conclusion

Yang-Tai Hsiao's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His innovative designs continue to shape the future of semiconductor devices.

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