The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2022
Filed:
Oct. 13, 2020
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Yen-Ting Chiang, Tainan, TW;
Chun-Yuan Chen, Tainan, TW;
Hsiao-Hui Tseng, Tainan, TW;
Sheng-Chan Li, Tainan, TW;
Yu-Jen Wang, Kaohsiung, TW;
Wei Chuang Wu, Tainan, TW;
Shyh-Fann Ting, Tainan, TW;
Jen-Cheng Liu, Hsin-Chu, TW;
Dun-Nian Yaung, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor image sensor device includes a semiconductor substrate, a radiation-sensing region, and a first isolation structure. The radiation-sensing region is in the semiconductor substrate. The first isolation structure is in the semiconductor substrate and adjacent to the radiation-sensing region. The first isolation structure includes a bottom isolation portion in the semiconductor substrate, an upper isolation portion in the semiconductor substrate, and a diffusion barrier layer surrounding a sidewall of the upper isolation portion.