The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2022

Filed:

Apr. 12, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Takehito Koshizawa, San Jose, CA (US);

Mukund Srinivasan, Santa Clara, CA (US);

Tomohiko Kitajima, San Jose, CA (US);

Chang Seok Kang, San Jose, CA (US);

Sung-Kwan Kang, San Jose, CA (US);

Gill Y. Lee, San Jose, CA (US);

Susmit Singha Roy, Sunnyvale, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/1157 (2017.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 27/1157 (2013.01); H01L 27/11582 (2013.01);
Abstract

Methods and apparatus for forming a plurality of nonvolatile memory cells are provided herein. In some embodiments, the method, for example, includes forming a plurality of nonvolatile memory cells, comprising forming, on a substrate, a stack of alternating layers of metal including a first layer of metal and a second layer of metal different from the first layer of metal; removing the first layer of metal to form spaces between the alternating layers of the second layer of metal; and one of depositing a first layer of material to partially fill the spaces to leave air gaps therein or depositing a second layer of material to fill the spaces.


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