The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2022

Filed:

Sep. 30, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chi-Yang Yu, Taoyuan County, TW;

Kuan-Lin Ho, Hsinchu, TW;

Chin-Liang Chen, Kaohsiung, TW;

Yu-Min Liang, Taoyuan County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2006.01); H01L 23/498 (2006.01); H01L 25/00 (2006.01); H01L 21/48 (2006.01); H01L 21/54 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/36 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0655 (2013.01); H01L 21/4853 (2013.01); H01L 21/4882 (2013.01); H01L 21/54 (2013.01); H01L 23/3142 (2013.01); H01L 23/3178 (2013.01); H01L 23/49811 (2013.01); H01L 25/0652 (2013.01); H01L 25/50 (2013.01); H01L 21/563 (2013.01); H01L 23/3128 (2013.01); H01L 23/36 (2013.01); H01L 23/49816 (2013.01); H01L 23/49827 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/1403 (2013.01); H01L 2224/14181 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/92125 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/157 (2013.01); H01L 2924/15162 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/15787 (2013.01); H01L 2924/15788 (2013.01); H01L 2924/18161 (2013.01); H01L 2924/3511 (2013.01);
Abstract

A method of manufacturing a semiconductor structure includes providing a substrate including a redistribution layer (RDL) disposed over the substrate, disposing a first patterned mask over the RDL, disposing a first conductive material over the RDL exposed from the first patterned mask to form a first conductive pillar, removing the first patterned mask, disposing a second patterned mask over the RDL, disposing a second conductive material over the RDL exposed from the second patterned mask to form a second conductive pillar, removing the second patterned mask, disposing a first die over the first conductive pillar, and disposing a second die over the second conductive pillar. A height of the second conductive pillar is substantially greater than a height of the first conductive pillar.


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