The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2022

Filed:

Apr. 01, 2016
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Shawna M. Liff, Scottsdale, AZ (US);

Feras Eid, Chandler, AZ (US);

Aleksandar Aleksov, Chandler, AZ (US);

Sasha N. Oster, Marion, IA (US);

Baris Bicen, Chandler, AZ (US);

Thomas L. Sounart, Chandler, AZ (US);

Valluri R. Rao, Saratoga, CA (US);

Johanna M. Swan, Scottsdale, AZ (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/047 (2006.01); D06M 10/06 (2006.01); D06M 11/46 (2006.01); D06M 11/47 (2006.01); H01L 41/316 (2013.01); D06M 17/00 (2006.01); H01L 41/087 (2006.01); D06M 11/83 (2006.01); H01L 41/187 (2006.01); H01L 41/29 (2013.01); D01F 11/00 (2006.01);
U.S. Cl.
CPC ...
D06M 10/06 (2013.01); D06M 11/46 (2013.01); D06M 11/47 (2013.01); D06M 11/83 (2013.01); D06M 17/00 (2013.01); H01L 41/047 (2013.01); H01L 41/087 (2013.01); H01L 41/1873 (2013.01); H01L 41/1876 (2013.01); H01L 41/29 (2013.01); H01L 41/316 (2013.01); D01F 11/00 (2013.01);
Abstract

Embodiments of the invention include an active fiber with a piezoelectric layer that has a crystallization temperature that is greater than a melt or draw temperature of the fiber and methods of forming such active fibers. According to an embodiment, a first electrode is formed over an outer surface of a fiber. Embodiments may then include depositing a first amorphous piezoelectric layer over the first electrode. Thereafter, the first amorphous piezoelectric layer may be crystallized with a pulsed laser annealing process to form a first crystallized piezoelectric layer. In an embodiment, the pulsed laser annealing process may include exposing the first amorphous piezoelectric layer to radiation from an excimer laser with an energy density between approximately 10 and 100 mJ/cm2 and pulse width between approximately 10 and 50 nanoseconds. Embodiments may also include forming a second electrode over an outer surface of the crystallized piezoelectric layer.


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