The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2022
Filed:
Jun. 29, 2018
Intel Corporation, Santa Clara, CA (US);
Tanay Gosavi, Hillsboro, OR (US);
Sasikanth Manipatruni, Portland, OR (US);
Chia-Ching Lin, Portland, OR (US);
Gary Allen, Portland, OR (US);
Kaan Oguz, Beaverton, OR (US);
Kevin O'Brien, Portland, OR (US);
Noriyuki Sato, Hillsboro, OR (US);
Ian Young, Portland, OR (US);
Dmitri Nikonov, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Embodiments herein relate to magnetically doping a spin orbit torque electrode (SOT) in a magnetic random access memory apparatus. In particular, the apparatus may include a free layer of a magnetic tunnel junction (MTJ) coupled to a SOT electrode that is magnetically doped to apply an effective magnetic field on the free layer, where the free layer has a magnetic polarization in a first direction and where current flowing through the magnetically doped SOT electrode is to cause the magnetic polarization of the free layer to change to a second direction that is substantially opposite to the first direction.