The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2022
Filed:
Jun. 25, 2019
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Bok Eng Cheah, Bukit Gambir, MY;
Choong Kooi Chee, Penang, MY;
Jackson Chung Peng Kong, Tanjung Tokong, MY;
Tat Hin Tan, Penang, MY;
Wai Ling Lee, Bayan Lepas, MY;
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76898 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/5286 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05096 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/17181 (2013.01);
Abstract
Disclosed embodiments include a multi-chip package that includes a stacked through-silicon via in a first semiconductive device, and the first semiconductive device is face-to-face coupled to a second semiconductive device by the stacked through-silicon via. The stacked through-silicon via includes a first portion that contacts a second portion, and the first portion emerges from an active semiconductive region of the first semiconductive device adjacent a keep-out region.