The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2022
Filed:
Nov. 26, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Huan-Sheng Wei, Taipei, TW;
Hung-Li Chiang, Taipei, TW;
Chia-Wen Liu, Taipei, TW;
Yi-Ming Sheu, Hsinchu, TW;
Zhiqiang Wu, Hsinchu County, TW;
Chung-Cheng Wu, Hsin-Chu County, TW;
Ying-Keung Leung, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/311 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); H01L 21/02236 (2013.01); H01L 21/02532 (2013.01); H01L 21/30604 (2013.01); H01L 21/31111 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/78654 (2013.01); H01L 29/78696 (2013.01); H01L 29/7848 (2013.01);
Abstract
A multi-gate semiconductor device having a fin element, a gate structure over the fin element, an epitaxial source/drain feature adjacent the fin element; a dielectric spacer interposing the gate structure and the epitaxial source/drain feature.