The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2022
Filed:
Jun. 01, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chia-Ching Lee, New Taipei, TW;
Hung-Chin Chung, Pingzhen, TW;
Chung-Chiang Wu, Taichung, TW;
Hsuan-Yu Tung, Keelung, TW;
Kuan-Chang Chiu, Hsinchu, TW;
Chien-Hao Chen, Chuangwei Township, TW;
Chi On Chui, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 21/28 (2006.01); H01L 21/8234 (2006.01); H01L 29/49 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4966 (2013.01); H01L 21/28097 (2013.01); H01L 21/82345 (2013.01); H01L 21/823828 (2013.01); H01L 21/823842 (2013.01); H01L 29/401 (2013.01); H01L 29/4975 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01);
Abstract
A semiconductor device and method of manufacture are provided. In some embodiments a treatment process is utilized to treat a work function layer. The treatment prevents excessive oxidation of the work function layer during subsequent processing steps, such as application of a subsequent photoresist material, thereby allowing the work function layer to be thinner than otherwise.