The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2022
Filed:
Mar. 30, 2018
Intel Corporation, Santa Clara, CA (US);
Hyungjin Ma, Hillsboro, OR (US);
Gregory Toepperwein, Portland, OR (US);
Nabil Laachi, Portland, OR (US);
Chihhui Wu, Hillsboro, OR (US);
Vasudev Lal, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A method for optical proximity correction (OPC) comprises creating a semi-physical model of a mask for a current layer in an IC design layout using physical parameters of a lithography process used to create the mask, the semi-physical model specifying contours of the plurality of features of the mask. It is determined from design information whether the current layer is deformed by the one or more reference layers that overlap the current layer near the contours. Responsive to determining that the current layer is deformed by the one or more reference layers, the semi-physical model and the design information of the one or more reference layers are input into a trained machine learning algorithm to generate a contour shift prediction for the current layer, the contour shift prediction estimating a residual error of the semi-physical model. The contour shift prediction is then used for multilayer OPC correction of the current layer.