The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2022
Filed:
Jan. 20, 2021
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Han-Yu Lin, Nantou County, TW;
Li-Te Lin, Hsinchu, TW;
Tze-Chung Lin, Hsinchu, TW;
Fang-Wei Lee, Hsinchu, TW;
Yi-Lun Chen, Taichung, TW;
Jung-Hao Chang, Taichung, TW;
Yi-Chen Lo, Hsinchu County, TW;
Fo-Ju Lin, Keelung, TW;
Kenichi Sano, Hsinchu, TW;
Pinyen Lin, Rochester, NY (US);
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A technique for semiconductor manufacturing is provided. The technique includes the operations as follows. A semiconductor structure having a first material and a second material is revived. The first material has a first incubation time to a first etching chemistry. The second material has a second incubation time to the first etching chemistry. The first incubation time is shorter than the second incubation time. A first main etch to the semiconductor structure for a first duration by the first etching chemistry is performed. The first duration is greater than the first incubation time and shorter than the second incubation time.