The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2022

Filed:

Sep. 01, 2020
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Hiroyuki Sada, Beppu, JP;

Shoichi Iriguchi, Beppu, JP;

Genki Yano, Beppu, JP;

Luu Thanh Nguyen, San Jose, CA (US);

Ashok Prabhu, San Jose, CA (US);

Anindya Poddar, Sunnyvale, CA (US);

Yi Yan, Sunnyvale, CA (US);

Hau Nguyen, San Jose, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/78 (2006.01); H01L 21/683 (2006.01); H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
H01L 24/03 (2013.01); H01L 21/78 (2013.01); H01L 24/05 (2013.01); H01L 21/6836 (2013.01); H01L 23/495 (2013.01); H01L 23/49513 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 2221/68336 (2013.01); H01L 2224/03015 (2013.01); H01L 2224/0331 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05171 (2013.01); H01L 2224/05563 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48175 (2013.01); H01L 2224/73265 (2013.01);
Abstract

A method for backside metallization includes inkjet printing a pattern of nanosilver conductive ink on a first surface of a silicon wafer. The silicon wafer includes a plurality of dies. The pattern includes a clearance area along a scribe line between the dies. A laser is focused, through a second surface of the wafer, at a point between the first surface of the silicon wafer and the second surface of the silicon wafer. The second surface is opposite the first surface. The dies are separated along the scribe line.


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