The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2022
Filed:
Jul. 20, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/82 (2006.01); H01L 23/00 (2006.01); H01L 21/268 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/544 (2006.01); H01L 23/58 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/82 (2013.01); H01L 21/268 (2013.01); H01L 21/563 (2013.01); H01L 23/3142 (2013.01); H01L 23/544 (2013.01); H01L 23/562 (2013.01); H01L 23/585 (2013.01); H01L 24/17 (2013.01); H01L 24/81 (2013.01); H01L 25/0655 (2013.01); H01L 25/50 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 2223/5446 (2013.01); H01L 2223/54426 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0362 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05684 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/1146 (2013.01); H01L 2224/11452 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13164 (2013.01); H01L 2224/13609 (2013.01); H01L 2224/13611 (2013.01); H01L 2224/13616 (2013.01); H01L 2224/13639 (2013.01); H01L 2224/13644 (2013.01); H01L 2224/13655 (2013.01); H01L 2224/13664 (2013.01); H01L 2224/16112 (2013.01); H01L 2224/16113 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/92125 (2013.01); H01L 2224/94 (2013.01); H01L 2924/10156 (2013.01); H01L 2924/10157 (2013.01); H01L 2924/14 (2013.01); H01L 2924/15192 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/18161 (2013.01);
Abstract
An embodiment method includes providing a wafer including a first integrated circuit die, a second integrated circuit die, and a scribe line region between the first integrated circuit die and the second integrated circuit die. The method further includes forming a kerf in the scribe line region and after forming the kerf, using a mechanical sawing process to fully separate the first integrated circuit die from the second integrated circuit die. The kerf extends through a plurality of dielectric layers into a semiconductor substrate.