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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11355350 B1

PDFFull Text
Date of Patent:
Jun. 07, 2022

Filed:

Dec. 08, 2020

Etching method, substrate processing apparatus, and substrate processing system

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Shinya Ishikawa, Miyagi, JP;

Kenta Ono, Miyagi, JP;

Maju Tomura, Miyagi, JP;

Masanobu Honda, Miyagi, JP;

Assignee:

TOKYO ELECTRON LIMITED, Tokyo, JP;

Attorney:

Xsensus LLP

Primary Examiner:

Shamim Ahmed

Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); C23C 16/24 (2006.01); B05D 1/00 (2006.01); C23C 16/56 (2006.01); B05D 3/14 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31138 (2013.01); B05D 1/62 (2013.01); B05D 3/145 (2013.01); C23C 16/24 (2013.01); C23C 16/45536 (2013.01); C23C 16/56 (2013.01); H01L 21/0228 (2013.01); H01L 21/02274 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/67069 (2013.01); H01J 37/32183 (2013.01); H01J 2237/334 (2013.01); H01J 2237/3321 (2013.01);
Abstract

A system, apparatus and method enable etching of a layer of a substrate with reduced etching on the surface of a side wall of the layer. The etching method includes forming a protective layer on a surface of the side wall defining a recess in the layer. The protective layer contains phosphorus. The etching method further includes etching the layer in one or more additional cycles so as to increase a depth of the recess after the forming the protective layer.

Find Patent Forward Citations

Ishikawa, Shinya. (2022). Etching method, substrate processing apparatus, and substrate processing system (U.S. Patent No. 11355350). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11355350

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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