The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Sep. 23, 2016
Applicants:

Nippon Micrometal Corporation, Iruma, JP;

Nippon Steel Chemical & Material Co., Ltd., Tokyo, JP;

Inventors:

Daizo Oda, Saitama, JP;

Takumi Ohkabe, Saitama, JP;

Teruo Haibara, Saitama, JP;

Takashi Yamada, Saitama, JP;

Tetsuya Oyamada, Tokyo, JP;

Tomohiro Uno, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); C22C 5/10 (2006.01); C22C 5/06 (2006.01);
U.S. Cl.
CPC ...
H01L 24/45 (2013.01); C22C 5/06 (2013.01); C22C 5/10 (2013.01); H01L 24/48 (2013.01); H01L 2224/45005 (2013.01); H01L 2224/45105 (2013.01); H01L 2224/45109 (2013.01); H01L 2224/45139 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/45155 (2013.01); H01L 2224/45164 (2013.01); H01L 2224/45169 (2013.01); H01L 2224/45173 (2013.01); H01L 2224/45186 (2013.01); H01L 2224/45193 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/48507 (2013.01); H01L 2924/0102 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01015 (2013.01); H01L 2924/01039 (2013.01); H01L 2924/01048 (2013.01); H01L 2924/01057 (2013.01); H01L 2924/01058 (2013.01);
Abstract

The present invention has as its object the provision of a bonding wire for semiconductor devices mainly comprised of Ag, in which bonding wire for semiconductor devices, the bond reliability demanded for high density mounting is secured and simultaneously a sufficient, stable bond strength is realized at a ball bond, no neck damage occurs even in a low loop, the leaning characteristic is excellent, and the FAB shape is excellent. To solve this problem, the bonding wire for semiconductor devices according to the present invention contains one or more of Be, B, P, Ca, Y, La, and Ce in a total of 0.031 at % to obtain a 0.180 at %, further contains one or more of In, Ga, and Cd in a total of 0.05 at % to 5.00 at %, and has a balance of Ag and unavoidable impurities. Due to this, it is possible to obtain a bonding wire for semiconductor devices sufficiently forming an intermetallic compound layer at a ball bond interface to secure the bond strength of the ball bond, not causing neck damage even in a low loop, having a good leaning characteristic, and having a good FAB shape.


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