The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Feb. 28, 2019
Applicant:

Asml Netherlands B.v., Veldhoven, NL;

Inventors:

Yue Ma, Escondido, CA (US);

Antonius Theodorus Wilhelmus Kempen, Rosmalen, NL;

Klaus Martin Hummler, San Diego, CA (US);

Johannes Hubertus Josephina Moors, Helmond, NL;

Jeroen Hubert Rommers, Lommel, BE;

Hubertus Johannes Van De Wiel, Oss, NL;

Andrew David Laforge, Poway, CA (US);

Fernando Brizuela, San Diego, CA (US);

Rob Carlo Wieggers, Utrecht, NL;

Umesh Prasad Gomes, Eindhoven, NL;

Elena Nedanovska, Eindhoven, NL;

Celal Korkmaz, Eindhoven, NL;

Alexander Downn Kim, San Diego, CA (US);

Rui Miguel Duarte Rodrigues Nunes, Eindhoven, NL;

Hendrikus Alphonsus Ludovicus Van Dijck, IJsselstein, NL;

William Peter Van Drent, Best, NL;

Peter Gerardus Jonkers, Waalre, NL;

Qiushi Zhu, San Diego, CA (US);

Parham Yaghoobi, Eindhoven, NL;

Jan Steven Christiaan Westerlaken, Heesch, NL;

Martinus Hendrikus Antonius Leenders, Rhoon, NL;

Alexander Igorevich Ershov, Escondido, CA (US);

Igor Vladimirovich Fomenkov, San Diego, CA (US);

Fei Liu, Eindhoven, NL;

Johannes Henricus Wilhelmus Jacobs, Heeze, NL;

Alexey Sergeevich Kuznetsov, Zaltbommel, NL;

Assignee:

ASML Netherlands B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70166 (2013.01); G03F 7/70033 (2013.01); G03F 7/70883 (2013.01); G03F 7/70925 (2013.01);
Abstract

Degradation of the reflectivity of one or more reflective optical elements in a system (SO) for generating EUV radiation is reduced by the controlled introduction of a gas into a vacuum chamber () containing the optical element. The gas may be added to the flow of another gas such as hydrogen or alternated with the introduction of hydrogen radicals.


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