The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2022

Filed:

Jan. 15, 2020
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Johann Gatterbauer, Parsberg, DE;

Wolfgang Lehnert, Lintach, DE;

Norbert Mais, Munich, DE;

Verena Muhr, Regensburg, DE;

Edmund Riedl, Wald, DE;

Harry Sax, Straubing, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 21/02 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/495 (2006.01); C23C 14/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/4825 (2013.01); C23C 14/12 (2013.01); H01L 21/02118 (2013.01); H01L 21/02178 (2013.01); H01L 21/56 (2013.01); H01L 23/3121 (2013.01); H01L 23/49586 (2013.01);
Abstract

A method of forming a layer structure is provided. The method may include plasma-treating a metal surface with a hydrogen-containing plasma, thereby forming nucleophilic groups over the metal surface, and forming an organic layer over the metal surface, wherein the organic layer comprises silane and is covalently bonded to the nucleophilic groups.


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