The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2022
Filed:
Jul. 30, 2020
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Zhi Tian, Shanghai, CN;
Juanjuan Li, Shanghai, CN;
Hua Shao, Shanghai, CN;
Haoyu Chen, Shanghai, CN;
SHANGHAI HUALI INTEGRATED CIRCUIT CORPORATION, Shanghai, CN;
Abstract
The present application provides a buried tri-gate fin vertical gate structure. Which includes a transfer transistor on an epitaxial layer; a photodiode in the epitaxial layer at one side of the transfer transistor. A reset transistor on the epi-layer includes N+ regions at both sides of its gate, one of the N+ regions forms a floating diffusion node. The bottom of the fin vertical gate protrudes into the epitaxial layer with a number of vertical portions. Thus, increased surface areas enhance charge motion at the bottom, combining large-area transfer at an upper layer by the vertical gate and quick transfer at the bottom by the FINFET, thereby improving photo response.