The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2022
Filed:
May. 13, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chi-Yuan Shih, Hsinchu, TW;
Kai-Fung Chang, Taipei, TW;
Shih-Fen Huang, Jhubei, TW;
Wen-Chuan Tai, Hsinchu, TW;
Yi-Chuan Teng, Zhubei, TW;
Yi Heng Tsai, Hsinchu, TW;
You-Ru Lin, New Taipei, TW;
Yen-Wen Chen, Hsinchu County, TW;
Anderson Lin, Hsin-Chu, TW;
Fu-Chun Huang, Zhubei, TW;
Chun-Ren Cheng, Hsin-Chu, TW;
Ivan Hua-Shu Wu, Hsinchu County, TW;
Fan Hu, Taipei, TW;
Ching-Hui Lin, Taichung, TW;
Yan-Jie Liao, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure relates to a MIM (metal-insulator-metal) capacitor having a top electrode overlying a substrate. A passivation layer overlies the top electrode. The passivation layer has a step region that continuously contacts and extends from a top surface of the top electrode to sidewalls of the top electrode. A metal frame overlies the passivation layer. The metal frame continuously contacts and extends from a top surface of the passivation layer to upper sidewalls of the passivation layer in the step region. The metal frame has a protrusion that extends through the passivation layer and contacts the top surface of the top electrode.