The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2022
Filed:
Jul. 30, 2020
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Zhi Tian, Shanghai, CN;
Juanjuan Li, Shanghai, CN;
Hua Shao, Shanghai, CN;
Haoyu Chen, Shanghai, CN;
SHANGHAI HUALI INTEGRATED CIRCUIT CORPORATION, Shanghai, CN;
Abstract
The present disclosure provides a device structure for increasing the coupling ratio of a body-tied fin flash memory cell. The device includes a plurality of elongate fin structures arranged in parallel in an active layer on a substrate, a floating gate disposed on the top surface and the opposing sidewalls of each of the fin structures and at a predetermined location on the elongated fin, and dispersed structure. The dispersed structure comprises a plurality of stacked layers parallel to the substrate, spaced evenly apart; and two adjacent fin structures share one dispersed structure at their sidewalls. This device increases the distance between adjacent floating gates, reduces coupling capacitance, and reduces the disturbance between the cells, which is conducive to increasing the drain voltage, improving the programming speed, and further reducing the gate voltage. More optimization options for subsequent shrinking of the flash memory cells can be provided.