The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2022

Filed:

Jan. 03, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Chen-Hua Yu, Hsinchu, TW;

Chung-Shi Liu, Hsinchu, TW;

Ming-Da Cheng, Jhubei, TW;

Mirng-Ji Lii, Sinpu Township, TW;

Meng-Tse Chen, Changzhi Township, TW;

Wei-Hung Lin, Xinfeng Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 25/10 (2006.01); H01L 23/31 (2006.01); H01L 25/03 (2006.01); H01L 25/00 (2006.01); H01L 23/498 (2006.01); B23K 35/00 (2006.01); B23K 35/02 (2006.01); B23K 35/22 (2006.01); B23K 35/26 (2006.01); B23K 35/36 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); B23K 35/001 (2013.01); B23K 35/0222 (2013.01); B23K 35/22 (2013.01); B23K 35/262 (2013.01); B23K 35/3613 (2013.01); H01L 21/561 (2013.01); H01L 23/3135 (2013.01); H01L 23/3178 (2013.01); H01L 23/498 (2013.01); H01L 23/49816 (2013.01); H01L 24/08 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 24/81 (2013.01); H01L 24/94 (2013.01); H01L 24/97 (2013.01); H01L 25/03 (2013.01); H01L 25/0652 (2013.01); H01L 25/105 (2013.01); H01L 25/50 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/08113 (2013.01); H01L 2224/1184 (2013.01); H01L 2224/13005 (2013.01); H01L 2224/136 (2013.01); H01L 2224/13014 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13023 (2013.01); H01L 2224/13026 (2013.01); H01L 2224/1355 (2013.01); H01L 2224/1357 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13184 (2013.01); H01L 2224/13561 (2013.01); H01L 2224/13582 (2013.01); H01L 2224/13666 (2013.01); H01L 2224/1412 (2013.01); H01L 2224/14181 (2013.01); H01L 2224/16104 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/1703 (2013.01); H01L 2224/17051 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/94 (2013.01); H01L 2224/97 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06565 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/1023 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/014 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01); H01L 2924/381 (2013.01); H01L 2924/3841 (2013.01);
Abstract

Some embodiments relate to a semiconductor device package, which includes a substrate with a contact pad. A non-solder ball is coupled to the contact pad at a contact pad interface surface. A layer of solder is disposed over an outer surface of the non-solder ball, and has an inner surface and an outer surface which are generally concentric with the outer surface of the non-solder ball. An intermediate layer separates the non-solder ball and the layer of solder. The intermediate layer is distinct in composition from both the non-solder ball and the layer of solder. Sidewalls of the layer of solder are curved or sphere-like and terminate at a planar surface, which is disposed at a maximum height of the layer of solder as measured from the contact pad interface surface.


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